s mhop microelectronics c orp. a stu/d412s symbol v ds v gs i dm e as w a p d c 16 -55 to 150 i d units parameter 40 22 v v 20 gate-source voltage drain-source voltage thermal characteristics 10 mj product summary v dss i d r ds(on) (m ) max 40v 22a 40 @ vgs=4.5v 26 @ vgs=10v features n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a avalanche energy c maximum power dissipation a operating junction and storage temperature range t j , t stg ver 1.0 www.samhop.com.tw aug,07,2008 1 to-252 and to-251 package. super high dense cell design for low r ds(on) . rugged and reliable. stu series to-252aa(d-pak) g s d std series to-251(l-pak) g s d t a= 25 c t a= 25 c esd protected. g d s 80 t a= 70 c 17.5 a t a= 70 c 25 w 50 c/w thermal resistance, junction-to-ambient r ja 5 c/w thermal resistance, junction-to-case r jc a a
symbol min typ max units bv dss 40 v 1 i gss 10 ua v gs(th) 1 v 21 g fs 15 s v sd c iss 470 pf c oss 91 pf c rss 53 pf q g 8 nc 12 nc q gs 18 nc q gd 19 t d(on) 7.6 ns t r 1.4 ns t d(off) 2.2 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delaytime v ds =20v,i d =11a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =11a v ds =10v , i d =11a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics a 3 v gs =4.5v , i d =9a 26 30 40 m ohm b f=1.0mhz b v ds =20v,i d =11a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.0a 0.79 1.3 v notes a.surface mounted on fr4 board,t<10 sec. b.pulse test:pulse width < 300us, duty ctcle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,r g =25 ,v dd =20v,v gs =10v .(see figure13) _ _ stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 2 i s maximum continuous drain-source diode forward current 2.0 a 1.8 v ds =20v,i d =11a,v gs =4.5v 4 nc _
stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 30 24 18 12 6 0 0 0.5 1 1.5 2 2.5 3 v gs = 3. 5v v gs = 4. 5v v gs = 4v v gs = 10v v gs = 5v 20 16 12 8 4 0 0 0.7 1.4 2.1 2.8 3.5 4.2 tj = 125c - 55c 25c 60 50 40 30 20 10 1 6121824 30 1 v gs = 10v v gs = 4. 5v 2.0 1.8 1.6 1.4 1.2 1.0 0.0 0 25 50 75 150 100 125 v gs =4.5v i d =9a v gs =10v i d =11a 1. 3 1. 2 1. 1 1. 0 0. 9 0. 8 0. 7 0. 6 - 50 - 25 0 25 50 75 100 125 150 v ds = v gs i d = 250ua -50 -25 0 25 50 75 100 125 150 1. 15 1. 10 1. 05 1. 00 0. 95 0. 90 0. 85 i d = 250ua
stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 60 50 40 30 20 10 0 24 68 10 0 i d = 11a 25c 125c 75c 20. 0 10. 0 1. 0 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 25c 75c 125c 600 500 400 300 200 100 0 0 5 10 15 20 25 30 c iss c os s c rss 10 8 6 4 2 0 012 3 45678 v ds = 20v i d = 11a 9 100 10 1 60 600 1 6 10 60 100 600 300 vd s=20v, i d =1a vg s=10v td( of f ) tr tf td( on) 300 100 10 1 0.1 1 10 40 100 10 m s dc 1ms r ds ( on) li m it 1 0 0u s v gs =10v s ingle p uls e t a =25 c
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse
stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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